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808nm wavelength 40W output power CW laser bar

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808nm wavelength 40W output power CW laser bar

Brand Name : HTOE

Model Number : LDAC1-0808-0040

Place of Origin : Beijing, China

MOQ : 50 pcs

Price : Negotiable

Payment Terms : T/T

Supply Ability : 1000 pcs per month

Delivery Time : 15-25 working days

Packaging Details : Paper Box

Operation Mode : CW

Output Power : 40 watt

Center Wavelength : 808±5 nm

Fill Factor : 30%

Number of Unmounted Single Emitters : 19

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40 watt Laser Diode Bar , 808 nm Laser Diode Unmounted Bar

808nm wavelength 40W output power CW laser bar

Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

HTOE has been focusing on the semiconductor wafer technology from 1998, delivers the multimode high power at wavelengths between 635 and 1064nm.

  • High Power multimode unmounted bars up to 40W CW and 200W QCW output
  • Unmounted single emitters up to 2W CW Power
  • Available wavelengths include 635nm, 650nm, 808nm, 980nm and 1064nm

Parameters(25℃)

808nm wavelength 40W output power CW laser bar

Parameter Unit LDAC1-0808-0040
Optical Parameter Operation Mode - CW
Output Power Po W 40
Center Wavelength λc nm 808 ± 5
Geometrical Fill Factor - 30%
Number of Unmounted Single Emitters - 19
Electrical Parameter Slope Efficiency Es W/A ≥1.1
Threshold Current Ith A ≤7
Operating Current If A ≤40
Operating Voltage Vf V ≤2

Notice

808nm wavelength 40W output power CW laser bar

1. Item notice: LDAC1 (item model)-**** (center wavelength)-**** (output power).

2. Data sheet is based on the result of testing under 25℃.

3. Data sheet is based on the CS package testing.

4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.


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